Content: Based on the new Lissajous/Capacitance paper.
Argument: Transient AC analysis allows for a "virtual deprocessing" of the device. By interpreting the Lissajous identity, an analyst can determine the state of the gate oxide, depletion regions, and channel formation without opening the package.
Content: Based on the 3D Integrated Power and 3-Phase Applications papers.
Argument: As we move to 3D stacking and ultra-small footprints (FemtoFET), traditional failure modes are replaced by package-dominant thermal and mechanical stresses.
Content: Based on the Multiphase Buck Converter and ESD Robustness papers.
Argument: Modern design features (like integrated current sensing or self-protection Zeners) introduce new, non-linear failure modes where "good" electrical readings can mask underlying physical defects like solder voids or deep depletion.
Content: Based on the ISTFA 2022 Laser conference paper.
Argument: This synthesizes the portfolio by proving that the fundamental physics—specifically metal diffusion and thermal management—remains the ultimate reliability barrier whether the carrier is an electron (MOSFET) or a photon (Laser)